Tunneling voltage dependent heights of faulted and unfaulted Ir islands on Ir(111)
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چکیده
منابع مشابه
Tunneling voltage dependent heights of faulted and unfaulted Ir islands on Ir„111..
Analysis of homoepitaxial growth on Ir~111! by scanning tunneling microscopy ~STM! reveals that two different phases nucleate. We find islands in the regular face-centered cubic ~fcc! stacking as well as in the hexagonal close-packed ~hcp! stacking. Performing STM measurements on fcc and hcp areas shows an apparent, voltage dependent height difference of up to 6% of the regular layer distance. ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2003
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.68.201401